gzf3v6c to gzf91c document number 85769 rev. 1.7, 13-apr-05 vishay semiconductors www.vishay.com 1 17249 small signal zener diodes features ? silicon planar power zener diodes. low profile surface-mount package. low leakage current high temperature soldering: 260 c/10 sec. at terminals lead (pb)-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec mechanical data case: jedec do-219ab (smf ? ) plastic case packaging codes/options: gs18 / 10 k per 13 " reel, (8 mm tape), 50 k/box gs08 / 3 k per 7 " reel, (8 mm tape), 30 k/box weight: approx. 15 mg absolute maximum ratings t amb = 25 c, unless otherwise specified 1) mounted on epoxy glass pcb with 3 x 3 mm, cu pads ( 40 m thick) thermal characteristics t amb = 25 c, unless otherwise specified 1) mounted on epoxy glass pcb with 3 x 3 mm, cu pads ( 40 m thick) parameter test condition symbol value unit zener current (see table "characteristics") see page 2 power dissipation t a = 25 c p tot 800 1) mw parameter test condition symbol value unit thermal resistance junction to ambient air 1) r thja 180 k/w maximum junction temperature t j 150 c storage temperature range t stg - 55 to + 150 c e3
www.vishay.com 2 document number 85769 rev. 1.7, 13-apr-05 gzf3v6c to gzf91c vishay semiconductors electrical characteristics maximum v f = 1.2 v at i f = 200 ma 1) pulse test: tp 5 ms partnumber marking code zener voltage range 1) differential resistance temperature coefficient te s t current reverse current at reverse voltage v z @ i zt r dif @ i z z @ i z i zt i r v r v ? %/c ma a v min max typ max min max max gzf3v6c w5 3.4 3.8 4 8 -0.14 -0.04 100 100 1 gzf3v9c w6 3.7 4.1 4 8 -0.14 -0.04 100 50 1 gzf4v3c w7 4 4.6 4 7 -0.12 -0.02 100 25 1 gzf4v7c w8 4.4 5 3 7 -0.1 0 100 10 1 GZF5V1C w9 4.8 5.4 3 6 -0.08 -0.2 100 5 1 gzf5v6c wa 5.2 6 2 4 -0.04 0.04 100 10 2 gzf6v2c wb 5.8 6.6 2 3 -0.01 0.06 100 5 2 gzf6v8c wc 6.4 7.2 1 3 0 0.07 100 10 3 gzf7v5c wd 7 7.9 1 2 0 0.07 100 50 3 gzf8v2c we 7.7 8.7 1 2 0.03 0.08 100 10 3 gzf9v1c wf 8.5 9.6 2 4 0.03 0.08 50 10 5 gzf10c wg 9.4 10.6 2 4 0.05 0.09 50 7 7.5 gzf11c wh 10.4 11.6 4 7 0.05 0.1 50 4 8.2 gzf12c wi 11.4 12.7 4 7 0.05 0.1 50 3 9.1 gzf13c wk 12.4 14.1 5 10 0.05 0.1 50 2 10 gzf15c wl 13.8 15.6 5 10 0.05 0.1 50 1 11 gzf16c wm 15.3 17.1 6 15 0.06 0.11 25 1 12 gzf18c wn 16.8 19.1 6 15 0.06 0.11 25 1 13 gzf20c wo 18.8 21.2 6 15 0.06 0.11 25 1 15 gzf22c wp 20.8 23.3 6 15 0.06 0.11 25 1 16 gzf24c wr 22.8 25.6 7 15 0.06 0.11 25 1 18 gzf27c ws 25.1 28.9 7 15 0.06 0.11 25 1 20 gzf30c wt 28 32 8 15 0.06 0.11 25 1 22 gzf33c wu 31 35 8 15 0.06 0.11 25 1 24 gzf36c ww 34 38 21 40 0.06 0.11 10 1 27 gzf39c wx 37 41 21 40 0.06 0.11 10 1 30 gzf43c wy 40 46 24 45 0.07 0.12 10 1 33 gzf47c wz 44 50 24 45 0.07 0.12 10 1 36 gzf51c x1 48 54 25 60 0.07 0.12 10 1 39 gzf56c x2 52 60 25 60 0.07 0.12 10 1 43 gzf62c x3 58 66 25 80 0.08 0.13 10 1 47 gzf68c x4 64 72 25 80 0.08 0.13 10 1 51 gzf75c x5 70 79 30 100 0.08 0.13 10 1 56 gzf82c x6 77 87 30 100 0.08 0.13 10 1 62 gzf91c x7 85 96 60 200 0.09 0.13 5 1 68
gzf3v6c to gzf91c document number 85769 rev. 1.7, 13-apr-05 vishay semiconductors www.vishay.com 3 typical characteris tics (tamb = 25 c unless otherwise specified) figure 1. forward characteristics figure 2. admissible power dissi pation vs. ambient temperature figure 3. capacitance vs. zener voltage 17364 i f v f 0 0.2 0.4 0.6 0.8 1v 10 10 10 10 10 10 10 10 1 -1 -2 -3 -4 -5 2 3 ma t j =25c t j = 100 c p tot mw 800 600 400 200 0 200 c 100 t amb 17365 1 23 4 5 10 23 4 5 100 v v z 10 2 3 4 5 7 100 2 3 4 5 7 1000 pf c tot t j =25c v r =2v v r =1v v r =1v v r =2v 17366
www.vishay.com 4 document number 85769 rev. 1.7, 13-apr-05 gzf3v6c to gzf91c vishay semiconductors package dimensions in mm (inches) top view 5 5 z cathode band detail z enlarged 0.10 max 17247 0.85 (0.033) 0.35 (0.014) 3.9 (0.152) 3.5 (0.137) 0.99 (0.039) 0.97 (0.038) 0.16 (0.006) 1.9 (0.074) 1.7 (0.066) 1.2 (0.047) 0.8 (0.031) 2.9 (0.113) 2.7 (0.105) iso method e 1.6 (0.062) 1.3 (0.051) 1.4 (0.055) mounting pad layout
gzf3v6c to gzf91c document number 85769 rev. 1.7, 13-apr-05 vishay semiconductors www.vishay.com 5 blistertape for smf 18513 ps
www.vishay.com 6 document number 85769 rev. 1.7, 13-apr-05 gzf3v6c to gzf91c vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its po licy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
|
